Transition temperature of a magnetic semiconductor with angular momentum j.

We employ dynamical mean-field theory to identify the materials properties that optimize T(c) for a generalized double-exchange model. We reach the surprising conclusion that T(c) achieves a maximum when the band angular momentum j equals 3/2 and when the masses in the m(j) = +/- 1/2 and +/-3/2 and subbands are equal. However, we also find that T(c) is significantly reduced as the ratio of the masses decreases from one. Consequently, the search for dilute-magnetic semiconductor materials with high T(c) should proceed on two fronts. In semiconductors with p bands, such as the currently studied Mn-doped Ge and GaAs semiconductors, T(c) may be optimized by tuning the band masses through strain engineering or artificial nanostructures. On the other hand, semiconductors with s or d bands with nearly equal effective masses might prove to have higher T(c)'s than p-band materials with disparate effective masses.